Germanium is an important semiconductor material used in transistors and various other electronic devices. Its major end uses are fibre-optic systems and infrared optics, but it is also used for polymerisation catalysts, as well as in electronics and solar cell applications. This book presents current research in the study of germanium, including properties and generation by irradiation of germanium point defects in Ge-doped silica; Germanium encaged fullerene-synthesis; research of silicon and germanium structures with films of oxides and fluoride rare earth elements and new generation germanium detectors for double beta decay searches.

Preface; Defects in Germanium: Theoretical Aspects; Properties & Generation by Irradiation of Germanium Point Defects in Ge-Doped Silica; Germanium Encaged Fullerene-Synthesis, Extraction, Theoretical Calculation & their Possible Application; Change the Properties of Silicon & Germanium Structures with Films of Oxide & Fluoride Rare Earth Elements when External Impacts; Applications of RF Sputtered GexSi1-x andGexSi1-xOy Thin Films for Uncooled Infrared Detectors; New Generation Germanium Detectors for Double Beta Decay Searches; Si-Based Germanium Strained Layers & Heterostructures; Polycrystalline Germanium Thin Films on Glass for Photovoltaic Applications; Growth of Ge Crystals with Extremely Low Dislocation Density & Evaluation of Impurity Segregation; Performance of High Purity Germanium Detector Inside the Magnetic Field; Index.